n-In0.35Ga0.65N/p-Si异质结的制备及其电学性能研究

采用双光路双靶材脉冲激光沉积(PLD)系统在p-Si衬底上外延生长InGaN薄膜,研究了InGaN薄膜的显微组织结构和n-InGaN/p-Si异质结的电学性能。研究表明,InGaN薄膜为单晶结构,沿[0001]方向择优生长,薄膜表面光滑致密,In的原子含量为35%。霍尔(Hall)效应测试表明In_0.35Ga_0.65N薄膜呈n型半导体特性,具有高的载流子浓度和迁移率及低的电阻率。I-V曲线分析表明In_0.35Ga_0.65N/p-Si异质结具有良好的整流特性,在±4 V时的整流比为25,开路电压为1.32 V。In_0.35Ga_0.65N/p-Si异质结中存在热辅助载流子隧穿和复合隧穿两种电流传输机制。经拟合,得到异质结的反向饱和电流为1.05×10^-8 A,势垒高度为0.86 eV,理想因子为6.87。     

Pulsed EPR Dipolar Spectroscopy under the Breakdown of the High-Field Approximation: The High-Spin Iron(III) Case

Pulsed EPR dipolar spectroscopy (PDS) offers several methods for measuring dipolar coupling and thus the distance between electron-spin centers. To date, PDS measurements to metal centers were limited to ions that adhere to the high-field approximation. Here, the PDS methodology is extended to cases where the high-field approximation breaks down on the example of the high-spin Fe³⁺/nitroxide spin-pair. First, the theory developed by Maryasov et al. (Appl. Magn. Reson. 2006 , 30, 683–702) was adapted to derive equations for the dipolar coupling constant, which revealed that the dipolar spectrum does not only depend on the length and orientation of the interspin distance vector with respect to the applied magnetic field but also on its orientation to the effective g-tensor of the Fe³⁺ ion. Then, it is shown on a model system and a heme protein that a PDS method called relaxation-induced dipolar modulation enhancement (RIDME) is well-suited to measuring such spectra and that the experimentally obtained dipolar spectra are in full agreement with the derived equations. Finally, a RIDME data analysis procedure was developed, which facilitates the determination of distance and angular distributions from the RIDME data. Thus, this study enables the application of PDS to for example, the highly relevant class of high-spin Fe³⁺ heme proteins.     

强耦合腔-QED系统中原子的纳秒脉冲激发光谱研究

本文在多原子强耦合腔-QED系统中,利用脉冲宽度为5 ns的强脉冲光在垂直于腔轴方向直接激发原子,脉冲的峰值功率为40 mW,通过光学腔观测激发原子辐射到腔中的光子获得相应的激发光谱。我们发现当光场频率和原子跃迁失谐±80 MHz时原子激发率达到最大,而在共振时原子激发被抑制。我们建立了脉冲光与三能级原子相互作用的模型,通过缀饰态能够解释此现象。     

RIG型磁光薄膜的研究进展及应用

随着光通信技术与光子集成电路的发展,非互易性器件作为光通信系统中重要的组成部分得到了越来越广泛的研究与应用。基于磁光效应制成的磁光隔离器和环行器是目前应用最为广泛的非互易性器件,为了将非互易性器件整块集成在硅片上,需制备性能与块状磁光材料相当的磁光薄膜。在近红外通信波段(1 550 nm),以钇铁石榴石(Y₃Fe₅O₁₂,YIG)为代表的稀土铁石榴石(RIG)具备优良的磁光效应,是最具应用前景的磁光材料之一。研究发现,使用稀土离子对YIG薄膜进行掺杂可以有效改善其磁光性能,尤其是Bi³⁺和Ce³⁺掺杂的YIG表现出巨法拉第效应。本文首先介绍了法拉第效应原理,介绍了三种常见磁光薄膜的生长方法,回顾了近年来的主要研究成果,介绍了磁光薄膜在光隔离器和环行器中的应用,最后对磁光薄膜的未来发展趋势进行了展望。     

Hydrogen Peroxide Production of Individual Nanosecond Pulsed Discharges Submerged in Water of Elevated Conductivity

The production of hydrogen peroxide (H₂O₂) is a key parameter for the performance of pulsed discharges submerged in water utilized as advanced oxidation process. So far, any related assessment of the underlying mechanism was conducted for the application of several hundred discharges, which did not allow for a correlation with physical processes. Moreover, the production was rarely investigated depending on water conductivity as one of the most important parameters for the development of submerged discharges. Accordingly, hydrogen peroxide generation was investigated here for individual single discharge events instigated with 100 ns high-voltage pulses in water with three different conductivities and was associated with the discharge development, i. e. spatial expansion and dissipated electrical energy. The approach necessitated the improvement of an electrochemical flow injection analysis based on the reaction of Prussian blue with H₂O₂. Hydrogen peroxide concentrations were quadratically increasing with propagation time and stable for different water conductivities. H₂O₂ production per unit volume of a discharge was constant over time with an estimated rate constant of 3.2 mol ⋅ m⁻¹ s⁻¹, averaged over the crosssectional area of all discharge filaments. However, the individually dissipated energy increased with conductivity, hence, the production efficiency decreased from 6.1 g ⋅ kWh⁻¹ to 1.4 g ⋅ kWh⁻¹, which was explained by increased resistive losses within the bulk liquid.     

The Effect of Growth Parameters on Electrophysical and Memristive Properties of Vanadium Oxide Thin Films

We have experimentally studied the influence of pulsed laser deposition parameters on the morphological and electrophysical parameters of vanadium oxide films. It is shown that an increase in the number of laser pulses from 10,000 to 60,000 and an oxygen pressure from 3 × 10⁻⁴ Torr to 3 × 10⁻² Torr makes it possible to form vanadium oxide films with a thickness from 22.3 ± 4.4 nm to 131.7 ± 14.4 nm, a surface roughness from 7.8 ± 1.1 nm to 37.1 ± 11.2 nm, electron concentration from (0.32 ± 0.07) × 10¹⁷ cm⁻³ to (42.64 ± 4.46) × 10¹⁷ cm⁻³, electron mobility from 0.25 ± 0.03 cm²/(V·s) to 7.12 ± 1.32 cm²/(V·s), and resistivity from 6.32 ± 2.21 Ω·cm to 723.74 ± 89.21 Ω·cm. The regimes at which vanadium oxide films with a thickness of 22.3 ± 4.4 nm, a roughness of 7.8 ± 1.1 nm, and a resistivity of 6.32 ± 2.21 Ω·cm are obtained for their potential use in the fabrication of ReRAM neuromorphic systems. It is shown that a 22.3 ± 4.4 nm thick vanadium oxide film has the bipolar effect of resistive switching. The resistance in the high state was (89.42 ± 32.37) × 10⁶ Ω, the resistance in the low state was equal to (6.34 ± 2.34) × 10³ Ω, and the ratio R_HRS/R_LRS was about 14,104. The results can be used in the manufacture of a new generation of micro- and nanoelectronics elements to create ReRAM of neuromorphic systems based on vanadium oxide thin films.     

Isoflavonoid-Antibiotic Thin Films Fabricated by MAPLE with Improved Resistance to Microbial Colonization

Staphylococcus aureus (Gram-positive) and Pseudomonas aeruginosa (Gram-negative) bacteria represent major infectious threats in the hospital environment due to their wide distribution, opportunistic behavior, and increasing antibiotic resistance. This study reports on the deposition of polyvinylpyrrolidone/antibiotic/isoflavonoid thin films by the matrix-assisted pulsed laser evaporation (MAPLE) method as anti-adhesion barrier coatings, on biomedical surfaces for improved resistance to microbial colonization. The thin films were characterized by Fourier transform infrared spectroscopy, infrared microscopy, and scanning electron microscopy. In vitro biological assay tests were performed to evaluate the influence of the thin films on the development of biofilms formed by Gram-positive and Gram-negative bacterial strains. In vitro biocompatibility tests were assessed on human endothelial cells examined for up to five days of incubation, via qualitative and quantitative methods. The results of this study revealed that the laser-fabricated coatings are biocompatible and resistant to microbial colonization and biofilm formation, making them successful candidates for biomedical devices and contact surfaces that would otherwise be amenable to contact transmission.     

The Cage Structure of IndanCHF3 is Based on the Cooperative Effects of CH⋅⋅⋅π and CH⋅⋅⋅F Weak Hydrogen Bonds

The structural and energetic features of the C?H???π interaction and the internal dynamics of the CHF₃ group change drastically in going from benzene?CHF₃ to indan?CHF₃, according to the analysis of the rotational spectrum of the latter complex generated in a supersonic expansion.     

阴离子交换色谱-积分脉冲安培检测法测定寿胎丸中游离氨基酸

建立了阴离子交换色谱-积分脉冲安培检测法测定寿胎丸煎煮液中游离氨基酸的分析方法。实验考察了18种氨基酸的梯度洗脱条件,优化了固相萃取条件,最终选用SSDBX型固相萃取小柱净化煎煮液。在优化实验条件下,进行了加标回收实验,回收率在71.2%~120.9%之间,相对标准偏差为0.8%~10.4%。18种氨基酸的检测限为0.07~5.00μg/L。方法能满足寿胎丸煎煮液中氨基酸的检测要求。